Samsung begins intensive production of the second generation of 10 nm random access memory

Samsung has now begun intensive production of the second-generation 8Gb DDR3 8-Gigabit RAM, which will be the foundation for its future DDR4 memory. The new generation of 10nm random access memory will be 10% faster and 15% more efficient than … Continue reading Samsung begins intensive production of the second generation of 10 nm random access memory